[A-3-5L]Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique
M. Fukuda1, Y. Shimamune1, M. Nakamura1, K. Tanahashi1, T. Miyashita1, M. Nishikawa1, N. Tamura1, T. Mori1, Y. Nara1, M. Kase1(1.Fujitsu Microelectronics Ltd.)
