2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[A-3-5L]Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique

M. Fukuda1, Y. Shimamune1, M. Nakamura1, K. Tanahashi1, T. Miyashita1, M. Nishikawa1, N. Tamura1, T. Mori1, Y. Nara1, M. Kase1(1.Fujitsu Microelectronics Ltd.)
https://doi.org/10.7567/SSDM.2009.A-3-5L