[A-4-1]Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope
D. Leonelli1,2, A. Vandooren1, R. Rooyackers1, A. S. Verhulst1,2, S. De Gendt1,2, M. M. Heyns1,2, G. Groeseneken1,2(1.IMEC(Belgium), 2.Katholieke Univ. Leuven(Belgium))
