2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[A-4-1]Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope

D. Leonelli1,2, A. Vandooren1, R. Rooyackers1, A. S. Verhulst1,2, S. De Gendt1,2, M. M. Heyns1,2, G. Groeseneken1,2(1.IMEC(Belgium), 2.Katholieke Univ. Leuven(Belgium))
https://doi.org/10.7567/SSDM.2009.A-4-1