2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
[A-4-2]Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates
T. Mizuno1,2, N. Mizoguchi1, K. Tanimoto1, T. Yamauchi1, T. Tezuka3, T. Sameshima4(1.Kanagawa Univ.(Japan), 2.MIRAI-NIRC(Japan), 3.MIRAI-Toshiba(Japan), 4.Tokyo Univ. of Agri. And Tech.(Japan))
