2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
[A-5-1]NiSi metal S/D transistors with ultimaltely low Schottky barrier by sulfur Implantation After Silicidation Process
Y. Nishi1, A. Kinoshita1(1.Toshiba Corp.)
