2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
[B-2-1]Thermally stable Ni-silicide gate electrode with TiN barrier metal for NAND flash memory application with 24 nm technology and beyond
S. J. Whang1, M. S. Joo1, B. M. Seo1, K. E. Chang1, W. K. Kim1, T. W. Jung1, G. H. Kim1, J. Y. Lim1, K. Y. Kim1, K. Hong1, S. K. Park1(1.Hynix Semiconductor Inc.)
