2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-2-3]Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks

Y. Morita1, S. Migita1, N. Taoka1, W. Mizubayashi1, H. Ota1(1.MIRAI-AIST)
https://doi.org/10.7567/SSDM.2009.B-2-3
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