2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-2-4]New Criteria for Suppressing Extrinsic Defect Generation in Ultra Thin SiON Gate Insulator (EOT<1.4nm) for Advanced CMOSFETs

S. Shimamoto1, H. Kawashima2, T. Kikuchi1, Y. Yamaguchi2, A. Hiraiwa2(1.Hitachi, Ltd.(Japan), 2.Renesas Tech. Corp.(Japan))
https://doi.org/10.7567/SSDM.2009.B-2-4
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