2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-2-6L]In Situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing

Y. Yamada1, T. Aoyama2, H. Chino3, K. Hiraka3, J. Ishii1, S. Kadoya3, S. Kato2, H. Kiyama4, H. Kondo4, T. Kuroiwa4, K. Matsuo4, T. Owada5, T. Shimizu3, T. Yokomori5(1.AIST(Japan), 2.Semiconductor Leading Edge Tech. Inc.(Japan), 3.Chino Corp.(Japan), 4.Dainippon Screen Manufac. Co. Ltd.(Japan), 5.Ushio Inc.(Japan))
https://doi.org/10.7567/SSDM.2009.B-2-6L