2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
[B-4-2]Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control
M. Kadoshima1, S. Sakashita1, T. Kawahara1, M. Inoue1, M. Mizutani1, Y. Nishida1, A. Shimizu1, Y. Takeshima1, S. Yamanari1, M. Anma1, R. Mitsuhashi2, Y. Satoh2, S. Matsuyama2, A. Tsudumitani2, Y. Okuno2, H. Umeda1, J. Yugami1, H. Yoshimura1, H. Miyatake1(1.Renesas Tech. Corp.(Japan), 2.Panasonic Corp.(Japan))
