2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-4-4]Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya1, A. Kaneko1, K. Nagatomo1, M. Goto1, K. Tatsumura1, I. Hirano1, S. Kawanaka1, A. Azuma1, K. Nakajima1, T. Aoyama1, K. Eguchi1, A. Nishiyama1, Y. Toyoshima1, Y. Tsunashima1(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.B-4-4
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