2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
Back
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-5-3]Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique

T. Shimizu1, Y. Arayashiki1, S. Inumiya1, K. Nakajima1, T. Aoyama1, K. Eguchi1(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.B-5-3
Download PDFDownload PDF
Back