2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-5-4]Influence of Gate Electrode Stress on Channel Stress and Device Performance in Gate-First W/TiN Gate MOSFETs

T. Matsuki1, J. Yugami1, T. Eimori1, Y. Nara1, K. Ikeda1(1.Selete)
https://doi.org/10.7567/SSDM.2009.B-5-4