2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[B-7-1]High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation

C. H. Lee1, T. Nishimura1,2, T. Tabata1,2, K. Nagashio1,2, K. Kita1,2, A. Toriumi1,2(1.Univ. of Tokyo(Japan), 2.CREST-JST(Japan))
https://doi.org/10.7567/SSDM.2009.B-7-1
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