2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan

[A-2-3]Grain boundary effect on charge transport in pentacene thin films

M. Weis1, K. Gmucova1, V. Nadazdy1, D. Hasko2, D. Taguchi3, T. Manaka3, M. Iwamoto3(1.Slovak Academy of Sciences, 2.International Laser Centre , Slovakia, 3.Tokyo Tech. , Japan)
https://doi.org/10.7567/SSDM.2010.A-2-3
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