[A-1-1]Electronic Structures and Electric Properties of Rubrene Single Crystal Studied By Photoemission, Time-of-Flight, and Displacement Current Measurements
H. Ishii1(1.Chiba Univ. , Japan)
2010 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
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2010 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(655)
[A-1-2]Carrier Propagation Dependence on Applied Potentials in Pentacene OFET Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques
J. Lin1, M. Weis2, D. Taguchi1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan, 2.Slovak Aca. Sci , Slovakia)
[A-1-3]Transient Absorption Decay Characteristics at Visible Wavelength Region for NMe2-Silole:Fluorene Blend Film
T. Fukuda1, A. Furube2, R. Kobayashi1, N. Kamata1, K. Hatano1(1.Saitama Univ., 2.AIST , Japan)
[A-1-4]Computational Analysis of Electron Injection on Light-Emitting Polymer/Cathode Interface
I. Yamashita1, H. Onuma1, R. Nagumo1, R. Miura1, A. Suzuki1, H. Tsuboi1, N. Hatakeyama1, A. Endou1, H. Takaba1, M. Kubo1, A. Miyamoto1(1.Tohoku Univ. , Japan)
[A-2-1]Non-Contact Measurement of Charge Carrier Mobility in Inorganic and Organic Semiconductor Materials
S. Seki1,2, A. Asano1, Y. Honsho1, A. Saeki1,2(1.Osaka Univ., 2.PRESTO, JST , Japan)
[A-2-2]Probing of Transient Electric Field Distribution in ITO/PI/P3HT/Au Using Time-Resolved Second Harmonic Generation Measurement
R. Miyazawa1, D. Taguchi1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-2-3]Grain boundary effect on charge transport in pentacene thin films
M. Weis1, K. Gmucova1, V. Nadazdy1, D. Hasko2, D. Taguchi3, T. Manaka3, M. Iwamoto3(1.Slovak Academy of Sciences, 2.International Laser Centre , Slovakia, 3.Tokyo Tech. , Japan)
[A-3-1]Improved the power efficiency of white phosphorescent organic light-emitting diode with thin double emitting-layers and hole-trapping mechanism
F. S. Juang1, S. H. Wang1, Y. S. Tsai1, M. H. Gao1, Y. Chi2, H. P. Shieh3(1.National Formosa Univ., 2.National Tsing Hua Univ., 3.National Chiao Tung Univ. , Taiwan)
[A-3-2]Current Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes
H. Kajii1, N. Takahota1, Y. Wang1, Y. Ohmori1(1.Osaka Univ. , Japan)
[A-3-3]High efficiency phosphorescent organic light-emitting diode by incorporating an electron transport material into emitting layer
F. S. Juang1, S. H. Wang1, Y. S. Tsai1, B. S. Hsieh1, Y. Chi2, H. P. Shieh3(1.National Formosa Univ., 2.National Tsing Hua Univ., 3.National Chiao Tung Univ. , Taiwan)
[A-3-4]Enhancing Efficiency of Organic Light-Emitting Diodes Using a CsI-Doped Electron Transporting Layer
T. W. Kuo1, S. H. Su1, C. M. Wu1, M. Yokoyama1(1.I-Shou Univ. , Taiwan)
[A-3-5]Maskless Patterning of Vapor-Deposited Photosensitive Film and its Application to Organic Light-Emitting Diodes
M. Muroyama1, W. Saito1, S. Yokokura1, K. Tanaka1, H. Usui1(1.Univ. of Tokyo , Japan)
[A-3-6]Direct Probing of Carrier Behavior in Electroluminescence IZO/α-NPD/Alq3/LiF/Al Diode by Time-Resolved Optical Second-Harmonic Generation
D. Taguchi1, L. Zhang1, J. Li1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-4-1]Molecular Memory Nano-interfaced with Organic Molecules
H. Lee1, M. H. Jung2(1.SungKyunkwan Univ., 2.Electronics and Telecommunications Res. Inst. , Korea)
[A-4-2]The dry etching process for patterning P(VDF-TeFE) thin film with various conditions
D. Terashima1, J. H. Jeong1, C. Kimura1, H. Aoki1(1.Osaka Univ. , Japan)
[A-4-3]The influence of the intensity of an electric field on properties of P(VDF-TeFE) thin films during the annealing process
J. H. Jeong1, D. Terashima1, C. Kimura1, H. Aoki1(1.Osaka Univ. , Japan)
[A-4-4]Carrier Transport in Electrical Bistable Device based on Hyperbranched Polymer and Gold Nanoparticle Composite Thin Films
H. Ichikawa1, K. Yasui2, M. Ozawa2, K. Odoi2, K. Fujita1(1.Kyushu Univ., 2.Nissan Chemical Indus. Ltd. , Japan)
[A-5-1]Surface Manipulation of Precursor Carbazole Dendron Polymer Thin Films by Conducting-AFM Nanolithography
A. Baba1, R. Oyanagi1, T. Mashima1, Y. Ohdaira1, K. Shinbo1, K. Kato1, F. Kaneko1, G. Jiang2, R. Advincula2(1.Niigata Univ. , Japan, 2.Univ. of Houston , USA)
[A-5-2]Computational Study of Electronic States around Defects in Organic Semiconductors
T. Shimada1, M. Ohtomo2, T. Yanase2, T. Hasegawa2(1.Hokkaido Univ., 2.Univ. of Tokyo , Japan)
[A-5-3]Preparation of a Hybrid Sensor of Surface Plasmon Resonance and Quartz Crystal Micorobalance by Using Imprinted Grating Structure
K. Shinbo1, K. Kuroki1, Y. Tesuma1, Y. Ohdaira1, A. Baba1, K. Kato1, F. Kaneko1(1.Niigata Univ. , Japan)
[A-5-4L]Nonvolatile memory thin film transistors using triple polymeric dielectric layers
Y. C. Chen1, C. Y. Huang2, C. Y. Cheng1, H. C. Yu1, Y. K. Su1, T. H. Chang1(1.National Cheng Kung Univ., 2.National Taitung Univ. , Taiwan)
[A-5-5L]Passivation Effect of Diamond Like Carbon Films for Organic Light-Emitting Diodes
H. Butou1, H. Okada1, S. Naka1(1.Univ. of Toyama , Japan)
[A-6-1]Inkjet Printing of Organic Thin-Film Transistors
T. Kawase1, S. Moriya1, K. Nakamura1, K. Inoue1, T. Aoki1(1.Seiko Epson Corp. , Japan)
[A-6-2]Organic CMOS Logic Papers with In-Field User Customizability
T. Sekitani1, K. Ishida1, N. Masunaga1, R. Takahashi1, S. Shino2, U. Zschieschang3, H. Klauk3, M. Takamiya1, T. Sakurai1, T. Someya1(1.Univ. of Tokyo, 2.Mitsubishi Paper Mills Ltd. , Japan, 3.Max Planck Inst. for Solid State Research , Germany)
[A-6-3]Effects of an Interface Dipole Monolayer on Pentacene Organic Field-Effect Transistors
W. Ou-Yang1, K. Lee1, W. Martin1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-6-4]Organic transistors and circuits with parylene gate dielectric manufactured using subfemtoliter inkjet
T. Yokota1, Y. Noguchi1, Y. Kato1, T. Sekitani1, T. Someya1(1.Univ. of Tokyo , Japan)
[A-6-5]Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors
K. Lee1, W. Ou-Yang1, M. Weis2, D. Taguchi1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan, 2.Slovak Academy of Science , Slovakia)
[A-6-6L]Fabrication of Au electrodes with photopolymerization of triazine dithiol thin films
Y. Sato1, R. Ye1, K. Ohta1, M. Baba1(1.Iwate Univ. , Japan)
[A-7-1]A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure
A. Sugawara1, Y. Wada1, Y. Ishikawa1, T. Toyabe1(1.Toyo Univ. , Japan)
[A-7-2]Charge modulated reflectance measurement for probing carrier distribution in the pentacene field effect transistor
T. Manaka1, S. Kawashima1, Y. Tanaka1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-7-3]Bias-temperature-instability and thermal anneal effects of organic thin-film transistors
P. H. Chen1, P. Y. Lo1,2, T. S. Hu2, P. W. Li1(1.National Central Univ., 2.Indus. Tech. Res. Inst. , Taiwan)
[A-7-4]Transport Mechanism at the First-layered Pentacene Grains and Grain Boundaries
Y. Hu1,2, L. Wang1, Q. Qi1, C. Jiang1(1.National Center for Nanoscience and Tech., 2.Chinese Academy of Sci. , China)
[A-8-1]Materials and Processes for Air-Stable n-Channel Organic Transistors
J. H. Oh1,2, Z. Bao1(1.Stanford Univ. , USA, 2.UNIST , Korea)
[A-8-2]3 V-driven flexible organic transistors with mobility exceeding 2 cm2/Vs
K. Fukuda1, N. Uchiyama1, T. Sekitani1, U. Zschieschang2, H. Klauk2, T. Yamamoto3, K. Takimiya3, T. Someya1(1.Univ. of Tokyo , Japan, 2.Max Planck Inst. , Germany, 3.Hiroshima Univ. , Japan)
[A-8-3]Different interfacial carrier behaviors between α-NPD and pentacene double-layer device with a polyimide blocking-layer by time-resolved optical second harmonic generation
L. Zhang1, D. Taguchi1, J. Li1, T. Manaka1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-8-4]Megahertz Operation of Rectifier Circuits using Pentacene Thin-Film Transistors
M. Kitamura1, Y. Arakawa1(1.Univ. of Tokyo , Japan)
[A-8-5]Realization of Pentacene-based Thin Film Transistor Arrays for Large-area Organic Electronics Being Compatible with the Roll-to-Roll Manufacturing Technique
L. Wang1,2, D. Li1, C. Jiang1(1.National Center for Nanoscience and Tech., 2.Chinese Academy of Sci. , China)
[A-9-1]Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator
M. Liao1, Y. U. Song1, J. Ishikawa1, T. Sano1, J. Gao1, H. Ishiwara1, S. Ohmi1(1.Tokyo Tech , Japan)
[A-9-2]Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT
K. Kuribara1, T. Nakagawa1, K. Fukuda1, T. Yokota1, T. Sekitani1, U. Zschieschang2, H. Klauk2, T. Someya1, T. Yamamoto3, K. Takimiya3(1.Univ. of Tokyo , Japan, 2.Max Planck Inst for Solid State Res. , Germany, 3.Hiroshima Univ. , Japan)
[A-9-3]Direct observation of carrier behavior leading to electroluminescence in tetracene field-effect transistor
Y. Ohshima1, H. Satou1, T. Manaka1, H. Kohn1, N. Hirako1, M. Iwamoto1(1.Tokyo Tech , Japan)
[A-9-4]Diffuser micropump structured with extremely flexible diaphragm of 2 micron-thick polyimide film
Y. Liu1, H. Komatsuzaki1, Z. Duan1, Y. Nishioka1(1.Nihon Univ. , Japan)
[A-9-5]Printed Electrode for All-Printed Polymer Diode
M. Yoshida1, K. Suemori1, S. Uemura1, S. Hoshino1, N. Takada1, T. Kodzasa1, T. Kamata1(1.AIST , Japan)
[A-9-6]A Tunable Emission Prepared by Novel Photo-induced Color-Change Materials
W. T. Liu1, W. Y. Huang1(1.National Sun Yat-sen Univ. , Taiwan)
[A-9-7L]Fabrication of Sol-Gel Alumina Dielectric for Low-Voltage Operating Pentacene Transistor
K. K. Han1, S. Seo2(1.Seoul National Univ., 2.Kyungwon Univ. , Korea)
[B-1-1]Defect-Free GOI (Ge on Insulator) by SiGe Mixing-Triggered Liquid-Phase Epitaxy
M. Miyao1, K. Toko1,2, M. Kurosawa1,2, T. Sadoh1,2(1.Kyushu Univ., 2.JSPS , Japan)
[B-1-2]Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation
C. H. Lee1, T. Nishimura1,2, T. Tabata1, S. Wang1, K. Nagashio1,2, K. Kita1,2, A. Toriumi1,2(1.Univ. of Tokyo, 2.JST-CREST , Japan)
[B-1-3]Nature of Interface Traps in Ge MIS Structures with GeO2 Interfacial Layers
N. Taoka1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, S. Takagi1,2(1.MIRAI-NIRC, 2.Univ. of Tokyo , Japan)
[B-2-1]Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks
F. I. Alzakia1, K. Kita1,2, T. Nishimura1,2, K. Nagashio1,2, A. Toriumi1,2(1.Univ. of Tokyo, 2.JST-CREST , Japan)
[B-2-2]Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds
K. Toko1, T. Sakane1, H. Yokoyama1, M. Kurosawa1, T. Sadoh1, M. Miyao1(1.Kyushu Univ. , Japan)
[B-2-3]Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2
R. Zhang1, T. Iwasaki1, N. Taoka1, M. Takenaka1, S. Takagi1(1.Univ. of Tokyo , Japan)
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