2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan

[A-4-3]The influence of the intensity of an electric field on properties of P(VDF-TeFE) thin films during the annealing process

J. H. Jeong1, D. Terashima1, C. Kimura1, H. Aoki1(1.Osaka Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.A-4-3