International Conference on Solid State Devices and Materials
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2010 International Conference on Solid State Devices and Materials
Sep 21
- Sep 24, 2010
The University of Tokyo, Tokyo, Japan
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2010 International Conference on Solid State Devices and Materials
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2010 International Conference on Solid State Devices and Materials
Sep 21
- Sep 24, 2010
The University of Tokyo, Tokyo, Japan
[A-4-3]
The influence of the intensity of an electric field on properties of P(VDF-TeFE) thin films during the annealing process
J. H. Jeong
1
, D. Terashima
1
, C. Kimura
1
, H. Aoki
1
(1.Osaka Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.A-4-3
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