2010 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
2010 International Conference on Solid State Devices and Materials
Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
[A-9-2]Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT
K. Kuribara1, T. Nakagawa1, K. Fukuda1, T. Yokota1, T. Sekitani1, U. Zschieschang2, H. Klauk2, T. Someya1, T. Yamamoto3, K. Takimiya3(1.Univ. of Tokyo , Japan, 2.Max Planck Inst for Solid State Res. , Germany, 3.Hiroshima Univ. , Japan)
