2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan

[B-1-3]Nature of Interface Traps in Ge MIS Structures with GeO2 Interfacial Layers

N. Taoka1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, S. Takagi1,2(1.MIRAI-NIRC, 2.Univ. of Tokyo , Japan)
https://doi.org/10.7567/SSDM.2010.B-1-3
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