2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan

[B-2-2]Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds

K. Toko1, T. Sakane1, H. Yokoyama1, M. Kurosawa1, T. Sadoh1, M. Miyao1(1.Kyushu Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.B-2-2