2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

Sep 21 - Sep 24, 2010The University of Tokyo, Tokyo, Japan

[B-2-3]Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

R. Zhang1, T. Iwasaki1, N. Taoka1, M. Takenaka1, S. Takagi1(1.Univ. of Tokyo , Japan)
https://doi.org/10.7567/SSDM.2010.B-2-3
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