2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-1-2]High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa1, N. Tsurumi1, M. Nishijima1, Y. Anda1, M. Ishida1, T. Ueda1, T. Tanaka1(1.Panasonic Corp. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-2