International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-1-2]
High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate
S. Nakazawa
1
, N. Tsurumi
1
, M. Nishijima
1
, Y. Anda
1
, M. Ishida
1
, T. Ueda
1
, T. Tanaka
1
(1.Panasonic Corp. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-2
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