[A-1-1]InAlN/GaN HEMTs: Recent Progress and Challenges for the Future
J. Kuzmík1,2(1.Slovak Academy of Sciences , Slovakia, 2.TU Vienna , Austria)
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
You can search for presentations in this event.
SearchSearch Results(741)
[A-1-2]High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate
S. Nakazawa1, N. Tsurumi1, M. Nishijima1, Y. Anda1, M. Ishida1, T. Ueda1, T. Tanaka1(1.Panasonic Corp. , Japan)
[A-1-3]RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond
K. Hirama1, M. Kasu1, Y. Taniyasu1(1.NTT Corp. NTT Basic Res. Labs. , Japan)
[A-1-4]Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure
A. Imai1, K. Yamanaka2, Y. Suzuki1, T. Nanjo1, M. Suita1, K. Shiozawa1, Y. Abe1, E. Yagyu1, A. Shima1(1.Advanced Tech. R&D Center, Mitsubishi Electric Corp., 2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)
[A-1-5]Temperature Dependence and Current Collapse of AlGaN/GaN Super Heterojunction Field Effect Transistor
S. Yagi1, S. Hirata1, Y. Sumida1, A. Nakajima2, H. Kawai1, E. M. Sankara Narayanan2(1.POWDEC. K. K. , Japan, 2.Univ. Sheffeld , UK)
[A-1-6]Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor
H. A. Shih1, M. Kudo1, M. Akabori1, T. Suzuki1(1.JAIST , Japan)
[A-2-1]Extending the Bandwidth and Functionality of High Performance InP HBT Technologies
M. Urteaga1, R. Pierson1, J. Bergman1, D. H. Kim1, P. Rowell1, B. Brar1, M. Rodwell2(1.Teledyne Scientific Company, 2.Univ. of California, Santa Barbara , USA)
[A-2-2]Low-turn-on voltage heterojunction bipolar transistors with a C-doped InxGa1-xAs1-ySby base grown by metalorganic chemical vapor deposition
T. Hoshi1, H. Sugiyama1, H. Yokoyama1, K. Kurishima1, M. Ida1(1.NTT Photonics Labs, NTT Corp. , Japan)
[A-2-3]Effects of Plasma-PH3 passivation on Mobility Degradation Mechanisms and Current Conduction Mechanisms of In0.53Ga0.47As N-MOSFET
A. B. S. Sumarlina1,2, H. J. Oh1, A. Du2, S. J. Lee1(1.National Univ. of Singapore, 2.GLOBALFOUNDRIES Singapore Pte.Ltd. , Singapore)
[A-2-4]In0.53Ga0.47As Channel N-MOSFETs with Shallow Metallic S/D Extension
Z. Zhu1, X. Gong1, Ivana1, Y. C. Yeo1(1.National Univ. of Singapore , Singapore)
[A-4-1]GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure
M. Fujimatsu1, H. Saito1, Y. Miyamoto1(1.Tokyo Tech , Japan)
[A-4-2]Pnp AlGaN/InGaN Heterojunction Bipolar Light-Emitting Transistors with a Quantum Well in the Base
K. Kumakura1, T. Makimoto1, H. Yamamoto1(1.NTT Basic Res. Labs. , Japan)
[A-4-3]Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes Using Low-Melting Point Alloy Bumps
J. Nakano1, T. Shibata1, T. Okatsu1, M. Mori1, K. Maezawa1(1.Univ. of Toyama , Japan)
[A-4-4]Operating Principle and Integration of In-Plane Gate Logic Devices
Y. Komatsuzaki1, K. Saba1, K. Onomitsu2, H. Yamaguchi2, Y. Horikoshi1(1.Waseda Univ., 2.NTT BRL , Japan)
[A-5-1]Zinc Oxide Thin-Film Transistors on Flexible Plastic Substrates and Glass Substrates Fabricated at Room Temperature
T. Higaki1, Y. Kimura1, T. Maemoto1, S. Sasa1, M. Inoue1(1.Osaka Inst. of Tech. , Japan)
[A-5-2]Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition
Y. Kawamura1, M. Tani1, N. Hattori2, N. Miyatake2, M. Horita1, Y. Ishikawa1, Y. Uraoka1,3(1.NAIST, 2.Mitsui Eng. and Shipbuilding Co., Ltd., 3.CREST-JST , Japan)
[A-5-3]Effects of Excimer Laser annealing of Oxide Semiconductor Films
M. Fujii1, R. Ishihara2, T. Chen2, J. Van der Cingel2, M. R. T. Mofrad2, M. Kasami3, K. Yano3, M. Horita1,4, Y. Ishikawa1,4, Y. Uraoka1,4(1.NAIST , Japan, 2.Delft University of Technology , The Netherlands, 3.Idemitsu Kosan Co., Ltd., 4.CREST-JST , Japan)
[A-5-4]High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer
H. W. Zan1, C. C. Yeh2, C. C. Tsai1, H. F. Meng1(1.National Chiao Tung Univ., 2.E Ink Holdings Inc. , Taiwan)
[A-5-5]The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors
H. Y. Huang1, S. J. Wang1, C. H. Wu2, C. K. Chiang1, Y. C. Huang1, J. Y. Su1(1.National Cheng Kung Univ., 2.Chung Hua Univ. , Taiwan)
[A-8-1]High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate
H. Kambayashi1,3, T. Nomura1, S. Kato1, H. Ueda2, A. Teramoto3, S. Sugawa3, T. Ohmi3(1.Advanced Power Device Res. Association, 2.Tokyo Electron Tech. Development Inst. Inc., 3.Tohoku Univ. , Japan)
[A-8-2]Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaOxNy Gate Dielectric
T. Sato1, J. Okayasu1, T. Yamanouchi1, T. Yashiro1, J. Suzuki1, M. Takikawa1(1.Advantest Labs. Ltd. , Japan)
[A-8-3]Impacts of Dry Etching of GaN and AlGaN Surfaces on Interface Properties of GaN-based MOS Structures
S. Kim1, Y. Hori1, N. Azumaishi1, T. Hashizume1,2(1.Hokkaido Univ., 2.CREST-JST , Japan)
[A-8-4]Damage-free GaN Etching by Chlorine Neutral Beam
Y. Tamura1,3, X.Y. Wang1,3, C.H. Huang1,3, T. Kubota1, J. Ohta2, H. Fujioka2,3, S. Samukawa1,3(1.Tohoku Univ., 2.Univ. of Tokyo, 3.CREST-JST , Japan)
[A-8-5]Germanium/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As
H. X. Guo1, E. Y. J. Kong1, X. Zhang1, Y. C. Yeo1(1.National Univ. of Singapore , Singapore)
[A-8-6]Fabrication and analysis of AlN/GaAs(001) metal-insulator-semiconductor structure
M. Kudo1, H. A. Shih1, M. Akabori1, T. Suzuki1(1.JAIST , Japan)
[AL-6-1]High-Voltage SiC Power Devices for Energy Electronics
T. Kimoto1, J. Suda1(1.Kyoto Univ. , Japan)
[AL-6-2]Thermodynamic Control of Interface Layer Formation in High-k Gate Stacks on 4H-SiC
S. Nakatsubo1, T. Nishimura1, K. Kita1, K. Nagashio1, A. Toriumi1(1.Univ. of Tokyo , Japan)
[AL-6-3]Characteristics of 4H-SiC p-Channel MOSFETs with Ion-Implanted Buried Channel
M. Okamoto1, M. Iijima1, T. Nagano1, K. Fukuda1, H. Okumura1(1.AIST , Japan)
[AL-6-4]A Simple Thermal Impedance Measurement of SiC JFETs with Constant Current Operation
T. Kim1, T. Funaki1(1.Osaka Univ. , Japan)
[AL-6-5]Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
R. Hasegawa1, N. Yafune1, H. Tokuda1, Y. Mori3, H. Amano4, M. Kuzuhara1(1.Univ. of Fukui, 2.Sharp Corp., 3.Osaka Univ., 4.Nagoya Univ. , Japan)
[AL-6-6]Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions
D. S. Kim1, H. S. Kang1, C. H. Won1, C. H. Bu1, K. I. Jang1, C. M. Yang1, K. S. Im1, K. W. Kim1, S. D. Jung1, R. H. Kim1, M. K. Kwon1, J. H. Lee1(1.Kyungpook National Univ. , Korea)
[AL-7-1]InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage
Q. Zhou1, H. Chen1, C. Zhou1, Z. H. Feng2, S. J. Cai2, K. J. Chen1(1.Hong Kong Univ. of Sci. and Tech., 2.Hebei Semiconductor Res. Inst. , China)
[AL-7-2]Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs
N. Azumaishi1, N. Harada1, T. Hashizume1,2(1.Hokkaido Univ., 2.CREST-JST , Japan)
[AL-7-3]AlGaN/GaN HFET grown on 6-inch diameter Si(111) substrates by MOCVD
S. M. Cho1, E. J. Hwang1, J. Park1, K. C. Kim1, T. Jang1(1.LG Electronics Inst. of Tech. , Korea)
[AL-7-4]AlGaN/GaN HEMTs on Silicon with Hybrid Schottky-Ohmic Drain for Improved DC Characteristics
Y. S. Lin1, Y. W. Lian1, H. C. Lu1, Y. C. Huang1, S. S. H. Hsu1(1.National Tsing Hua Univ. , Taiwan)
[AL-7-5]Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
A. F. Wilson1, A. Wakejima1, S. L. Selvaraj1, T. Egawa1(1.Nagoya Inst. of Tech. , Japan)
[B-1-1]Solution-processed small molecular phosphorescent organic light emitting devices with a mixed single layer
Z. Wang1, S. Naka1, H. Okada1(1.Univ. of Toyama , Japan)
[B-1-2]Hole Injection Enhancement in Organic Light-emitting Diodes by Introducing an Au Nanoparticles Layer
D. Wang1, K. Fujita1(1.Kyushu Univ. , Japan)
[B-1-3]Improvement on Electroluminescence of Red Organic Light Emitting Diode by Doping with Sensitizers
S. H. Yang1, C. H. Chuang1, S. C. Huang1, P. J. Shih1(1.National Kaohsiung Univ. of Applied Sciences , Taiwan)
[B-1-4]White Organic Light-Emitting Diodes Combining Blue Organic Light-Emitting Diodes with a Sr2SiO4:Eu3+ Color Conversion Layer
S. H. Su1, W. Y. Wang1, M. Yokoyama1(1.I-Shou Univ. , Taiwan)
[B-1-5]Pattern Formation of Phosphorescent Polymer Thin Films by Spin-Coated Photoreactive Monomer Films
D. Miyagawa1, M. Muroyama1, K. Tanaka1, H. Usui1(1.Tokyo Univ. of Agri. and Tech. , Japan)
[B-1-6]Device Parameters Determination by Novel Schottky Model Fitting for Organic Light-Emitting Diodes (OLEDs)
T. Hirai1, K. Weber1, M. Bown1, K. Ueno1(1.CSIRO , Australia)
[B-1-7L]Three Terminal Nano-Scale Electrode for Molecular Transistor Evaluation
K. Tsutsui1, M. Morita1, M. Tokuda1, H. Takagi1, Y. Ito1, Y. Wada1(1.Toyo Univ. , Japan)
[B-2-1]Nanotransfer Direct Printing Methods
M. M. Sung1(1.Hanyang Univ. , Korea)
[B-2-2]Work Function controlled Zn:Cu electrode for all-printed polymer diode
M. Yoshida1, S. Uemura1, H. Tokuhisa1, N. Takada1, T. Kamata1(1.AIST , Japan)
[B-2-3]Interface Control of ITO and Spin-Coated Polymer by Reactive Self-Assembled Monolayer
S. H. Kim1, H. Ohtsuka1, M. C. Tria2, R. C. Advincula2, H. Usui1(1.Tokyo Univ. of Agri. and Tech. , Japan, 2.Univ. Houston , USA)
[B-2-4]Field induced selective growth of organic conductive wires and molecular break junction by Joule heating
M. Sakai1, Y. Urabe1, H. Yamauchi1, M. Nakamura1,2, K. Kudo1(1.Chiba Univ., 2.NAIST , Japan)
[B-2-5]Bulk crystal growth of organic semiconductors for thermoelectric applications
Y. Ikuta1, Y. Tsuchida1, N. Muraya1, T. Nagahama1, T. Shimada1(1.Hokkaido Univ. , Japan)
[B-2-6]Geometric characterization of superoleophobic film
K. Tsuji1, S. Shiratori1(1.Keio Univ. , Japan)
[B-3-1]Room temperature fabrication of HfON gate insulator for low-voltage operating pentacene-based organic field-effect transistors
M. Liao1, H. Ishiwara1,2, S. Ohmi1(1.Tokyo Tech , Japan, 2.Konkuk Univ. , Korea)
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