International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-1-3]
RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond
K. Hirama
1
, M. Kasu
1
, Y. Taniyasu
1
(1.NTT Corp. NTT Basic Res. Labs. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-3
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