2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-1-4]Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure
A. Imai1, K. Yamanaka2, Y. Suzuki1, T. Nanjo1, M. Suita1, K. Shiozawa1, Y. Abe1, E. Yagyu1, A. Shima1(1.Advanced Tech. R&D Center, Mitsubishi Electric Corp., 2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)
