2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
Back
International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-1-6]Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor

H. A. Shih1, M. Kudo1, M. Akabori1, T. Suzuki1(1.JAIST , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-6
Download PDFDownload PDF
Back