2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-2-2]Low-turn-on voltage heterojunction bipolar transistors with a C-doped InxGa1-xAs1-ySby base grown by metalorganic chemical vapor deposition
T. Hoshi1, H. Sugiyama1, H. Yokoyama1, K. Kurishima1, M. Ida1(1.NTT Photonics Labs, NTT Corp. , Japan)
