International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-2-4]
In
0.53
Ga
0.47
As Channel N-MOSFETs with Shallow Metallic S/D Extension
Z. Zhu
1
, X. Gong
1
, Ivana
1
, Y. C. Yeo
1
(1.National Univ. of Singapore , Singapore)
https://doi.org/10.7567/SSDM.2011.A-2-4
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