International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-4-1]
GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure
M. Fujimatsu
1
, H. Saito
1
, Y. Miyamoto
1
(1.Tokyo Tech , Japan)
https://doi.org/10.7567/SSDM.2011.A-4-1
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