2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-4-1]GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure

M. Fujimatsu1, H. Saito1, Y. Miyamoto1(1.Tokyo Tech , Japan)
https://doi.org/10.7567/SSDM.2011.A-4-1