2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
Back
International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-4]High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

H. W. Zan1, C. C. Yeh2, C. C. Tsai1, H. F. Meng1(1.National Chiao Tung Univ., 2.E Ink Holdings Inc. , Taiwan)
https://doi.org/10.7567/SSDM.2011.A-5-4
Download PDFDownload PDF
Back