International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-5]The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang¹, S. J. Wang¹, C. H. Wu², C. K. Chiang¹, Y. C. Huang¹, J. Y. Su¹(1.National Cheng Kung Univ., 2.Chung Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.A-5-5