2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-8-1]High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate
H. Kambayashi1,3, T. Nomura1, S. Kato1, H. Ueda2, A. Teramoto3, S. Sugawa3, T. Ohmi3(1.Advanced Power Device Res. Association, 2.Tokyo Electron Tech. Development Inst. Inc., 3.Tohoku Univ. , Japan)
