International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[A-8-2]
Low-Leakage Current n-GaN/AlGaN/GaN HEMT with TaO
x
N
y
Gate Dielectric
T. Sato
1
, J. Okayasu
1
, T. Yamanouchi
1
, T. Yashiro
1
, J. Suzuki
1
, M. Takikawa
1
(1.Advantest Labs. Ltd. , Japan)
https://doi.org/10.7567/SSDM.2011.A-8-2
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