2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-8-4]Damage-free GaN Etching by Chlorine Neutral Beam

Y. Tamura1,3, X.Y. Wang1,3, C.H. Huang1,3, T. Kubota1, J. Ohta2, H. Fujioka2,3, S. Samukawa1,3(1.Tohoku Univ., 2.Univ. of Tokyo, 3.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.A-8-4
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