International Conference on Solid State Devices and Materials
Past Programs
日本語
Help
2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
Back
Event List
2011 International Conference on Solid State Devices and Materials
Detail
2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[AL-6-3]
Characteristics of 4H-SiC p-Channel MOSFETs with Ion-Implanted Buried Channel
M. Okamoto
1
, M. Iijima
1
, T. Nagano
1
, K. Fukuda
1
, H. Okumura
1
(1.AIST , Japan)
https://doi.org/10.7567/SSDM.2011.AL-6-3
Download PDF
Back