2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[AL-6-5]Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
R. Hasegawa1, N. Yafune1, H. Tokuda1, Y. Mori3, H. Amano4, M. Kuzuhara1(1.Univ. of Fukui, 2.Sharp Corp., 3.Osaka Univ., 4.Nagoya Univ. , Japan)
