2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[AL-6-6]Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions
D. S. Kim1, H. S. Kang1, C. H. Won1, C. H. Bu1, K. I. Jang1, C. M. Yang1, K. S. Im1, K. W. Kim1, S. D. Jung1, R. H. Kim1, M. K. Kwon1, J. H. Lee1(1.Kyungpook National Univ. , Korea)
