2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-7-1]InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage

Q. Zhou1, H. Chen1, C. Zhou1, Z. H. Feng2, S. J. Cai2, K. J. Chen1(1.Hong Kong Univ. of Sci. and Tech., 2.Hebei Semiconductor Res. Inst. , China)
https://doi.org/10.7567/SSDM.2011.AL-7-1
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