International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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2011 International Conference on Solid State Devices and Materials
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2011 International Conference on Solid State Devices and Materials
Sep 27
- Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[AL-7-2]
Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs
N. Azumaishi
1
, N. Harada
1
, T. Hashizume
1,2
(1.Hokkaido Univ., 2.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.AL-7-2
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