2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2011Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[D-4-4]Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design
K. L. Low1, C. Zhan1, G. Han1, Y. Yang1, K.H. Goh1, P. Guo1, E.H. Toh2, Y.C. Yeo1(1.National Univ. of Singapore, 2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)
