2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[A-1-2]High Speed and High Efficiency Si Optical Modulator with MOS Junction, Using Large-Grain of Poly-Silicon Gate
J. Fujikata1,2, M. Takahashi1,3, S. Takahashi1,2, T. Akagawa1,2, M. Noguchi1,2, T. Horikawa1,3, T. Nakamura1,2, Y. Arakawa1,4(1.PECST, 2.PETRA, 3.AIST, 4.Univ. of Tokyo , Japan)
