2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan

[A-2-5]Mixture formaion of ErxYb2-xSi2O7 and ErxYb2-xO3 for broadening the C - band in an optical amplifier on Si

H. Omi1,2, Y. Abe1, M. Anagnosti1, T. Tawara1,2(1.NTT Basic Research Labs., NTT Corp, 2.Nanophotonics Center, NTT Corp. , Japan)
https://doi.org/10.7567/SSDM.2012.A-2-5
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