2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[A-6-4]GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches
K. Morita1, H. Ueyama1, Y. Yasunaga1, Y. Nakagawa1,2, T. Kitada1, T. Isu1(1.Univ. of Tokushima, 2.NICHIA Corp. , Japan)
