2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan

[B-1-2]Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

T. Imamoto1,2, T. Endoh1,2(1.Tohoku Univ., 2.JST-CREST , Japan)
https://doi.org/10.7567/SSDM.2012.B-1-2