2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[B-1-2]Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics
T. Imamoto1,2, T. Endoh1,2(1.Tohoku Univ., 2.JST-CREST , Japan)