2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[B-1-3]Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor
T. Ishizu1, H. Inoue1, T. Matsuzaki1, S. Nagatsuka1, Y. Okazaki1, T. Onuki1, A. Isobe1, Y. Shionoiri1, K. Kato1, T. Okuda1, J. Koyama1, S. Yamazaki1(1.Semiconductor Energy Laboratory Co., Ltd. , Japan)
