2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[B-2-2]Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory
B. S. Jo1, H. J. Kang1, S. M. Joe1, M. K. Jeong1, S. K. Park2, K. R. Han2, B. G. Park1, J. H. Lee1(1.Seoul National Univ., 2.SK Hynix Inc. , Korea)
