2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[B-4-2]Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories
G. Palma1, E. Vianello1, G. Molas1, C. Cagli1, F. Longnos2, J. Guy1, M. Reyboz1, C. Carabasse1, M. Bernard1, F. Dahmani2, D. Bretegnier2, J. Liebault2, B. De Salvo1(1.CEA, LETI, MINATEC Campus, 2.Altis Semiconductor , France)
