2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan

[B-5-1]Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong1, W. Wu1, Z. Liu1, X. A. Tran2, H. Y. Yu3, Y. C. Yeo1(1.National Univ. of Singapore, 2.Nanyang Tech. Univ. , Singapore, 3.South Univ. of Sci. and Tech. , China)
https://doi.org/10.7567/SSDM.2012.B-5-1