2012 International Conference on Solid State Devices and Materials
Sep 25 - Sep 27, 2012Kyoto International Conference Center, Kyoto, Japan
[B-5-1]Switching Model of TaOx-based Non-polar Resistive Random Access Memory
X. Tong1, W. Wu1, Z. Liu1, X. A. Tran2, H. Y. Yu3, Y. C. Yeo1(1.National Univ. of Singapore, 2.Nanyang Tech. Univ. , Singapore, 3.South Univ. of Sci. and Tech. , China)