2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan
International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-2-4]Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell

T. Imamoto1,2, T. Endoh1,2(1.Tohoku Univ., 2.JST-CREST (Japan))
https://doi.org/10.7567/SSDM.2013.A-2-4