[A-6-3]Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write
S.Y. Kim1,2, J.M. Baek1, D.J. Seo1, J.K. Park1, J.H. Chun1, K.W. Kwon1(1.Sungkyunkwan Univ., 2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))
