2013 International Conference on Solid State Devices and Materials
Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan
2013 International Conference on Solid State Devices and Materials
Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan
[A-7-1]Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)
K. Shiraishi1,2, M.Y. Yang1, S. Kato1, M. Araidai3, K. Kamiya1, T. Yamamoto1, T. Ohyanagi4, N. Takaura4, M. Niwa5, B.M. Kope6, Y. Nishi6(1.Univ. of Tsukuba, 2.Nagoya Univ., 3.Univ. of Tsukuba, 4.Low-power Electronics Association & Project, 5.Tohoku Univ., 6.Stanford Univ. (Japan))
